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|
Application |
Factor to be monitored |
SDI technology |
Issue |
|
 |
Polished wafers Annealed wafers |
Heavy metal
contamination Surface Asperity & COP's |
SPV/Fe |
GOI GOI |
| Epi Wafers | Heavy metal contamination | SPV/Fe | GOI | |
|
Doping:
near surface depth profiles |
ac-SPV | VT control | ||
 |
Wafer Cleaning | Heavy metal contamination | SPV/Fe | GOI |
| Mobile ion contamination | MC | Reliability | ||
| Surface Asperity | SILC | GOI | ||
| Diffusion | Heavy metal contamination | SPV/Fe | GOI | |
| Mobile ion contamination | MC | Reliability | ||
| Oxide charge | COCOS | VT control | ||
| Dopant / surface contam. | ac-SPV | VT control | ||
| Oxide & interface quality | SILC | GOI | ||
| Plasma etch / ash | Charging damage | PDM | GOI | |
| Mobile ion contamination | MC | Reliability | ||
| Radiation damage | SILC, SIT | GOI | ||
| Thin films | Dielectric capacitance, and K | COCOS | Capacitance | |
| Charging damage | PDM | VT control | ||
| Oxide charge and Dit | COCOS | VT control | ||
| Leakage | SILC, BDF | ILD integrity | ||
| Ion Implant | Implant concentration & profile | ac-SPV | VT control | |
| Heavy metal contamination | SPV/Fe | GOI | ||
| Electron / Plasma flood | PDM | VT control | ||
| Advance dielectrics |
Dielectric
capacitance, EOT, K |
SDI C-V |
VT
control EOT |
|
| Dielectric leakage | SASS | Leakage | ||
| Dielectric charge and Dit | COCOS | VT control | ||
|
Plasma Nitrided Oxides (DPN/SPA) |
Dielectric capacitance, EOT, K |
SDI C-V |
VT
control EOT |
|
| Dielectric leakage | SASS | Leakage | ||
| Dielectric charge and Dit | COCOS | VT control | ||
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