SDI's patented SASS technology provides non-contact I-V measurements, over a range of ~3 orders of magnitude of leakage current. The unique approach allows the user to separately probe valence band / and conduction band offsets, obtaining additional information not accessible by traditional MOS techniques. Used in conjunction with non-contact stressing, SDI’s patented SILC method also allows for no contact evaluation of GOI and film wearout.

The latest generation of FAaST tools provide:
- non-contact I-V measurements for a wide range of surface dielectrics
- automatic extraction of leakage indicator parameter, and film composition indicator for advanced dielectrics
- Plasma nitrided oxides (DPN or SPA): in-line monitoring of dielectric thickness and nitrogen content.
- SILC mode allows non-contact stressing of dielectric, and evaluation of GOI and wearout through measurement of the stress induced leakage current
- Contour mapping showing cross wafer variations.
- Fully automated operation, with multiple security levels designed for the manufacturing environment.
- Options such as SMIF / FOUP loadports, automatic lot ID, wafer OCR, and fully SEMI compliant automation for data upload and remote system control.
- Automatic internal calibration of voltage, and corona charge deposition.

 The FAaST 200 series can be configured for multiple wafer sizes from 100mm to 200mm, and FAaST 300 series for 200mm-300mm wafers. Stand alone application specific systems are available. However generally the SASS technology module is combined with SDI’s C-V or SL technologies to provide more complete dielectric characterization.

H- probe and pulsed corona, all-in-one probe

SASS I-V