SDI Near Surface Doping (NSD) provides a non-contact, real-time technique for measuring the ionized impurity concentration in the surface region - critical for device performance. The measurement technology is combined together with SDI's new & proprietary surface preparation station in FAaST series tools, for automated monitoring on bare silicon or oxidized surfaces. Major applications include: monitoring dopant concentrations directly after epi deposition and ion implantation (including medium current / and high energy implants).

 The FAaST series tools with NSD measurement technology provide:
- Full wafer mapping capability, to monitor cross wafer variations in dopant concentration.
- Integrated surface preparation station, to provide accurate and stable measurements on bare silicon surfaces.
- Oxide thickness corrections for precise monitoring in oxidized wafers.
- Fully automated operation, with multiple security levels designed for the manufacturing environment.
- Options such as SMIF / FOUP loadports, automatic lot ID, wafer OCR,and fully SEMI compliant automation for data upload and remote systemcontrol.
- Automatic internal calibration.
- wafer type: p- / n- type; concentration range: 1E14 - >1E18 atoms/cm3

The FAaST 200 series can be configured for multiple wafer sizes from 100mm to 200mm, and FAaST 300 series for 200mm-300mm wafers. Stand alone NSD systems are available for utilization in a high volume manufacturing environment, or NSD tools can be combined with SDI's other technologies, such COCOS / CV / or SL, to minimize footprint, and provide complimentary measurement functions.


Near Surface Doping concentration:
Channeling effect during high energy implant
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