- SDI metrology systems are modular by design and can be configured for the specific customer.
- All measurements are non-contact and preparation free. They are done with industry proven SDI low injection SPV and/or new SDI variable level high injection digital SPV designed for PV.
- SDI’s PV monitoring is an extension of SPV to different spectral ranges that differentiate emitter, depletion and base regions. Appropriate algorithms are used to extract performance critical parameters of the incoming PV wafers and of the PV cell at different stages of processing.
Examples of new applications for silicon n-p cell
| A new variable low to high injection level digital SPV to extract the effective diffusion length in starting PV wafers and in the p-base region after emitter diffusion. |
| Probing of oxygen-boron and iron-boron defects and corresponding carrier injection induced PV cell degradation. |
| Digital SPV measurements of the front surface recombination velocity SF and the efficiency of silicon nitride passivation. |
| Measurement of the cell effective diffusion length exceeding cell thickness (SDI patented) for iron gettering and testing of back contact reduction of surface recombination, SB. |
| SDI’s unique digital SPV monitoring of the emitter sheet resistance and leakage current. |
- SDI proven monitoring precision; repeatability and mapping speed exceeds needs of the PV industry.
