Micro-measurements of C-V and I-V: product wafer measurements
Surface Photovoltage technology: contamination measurements Minority carrier diffusion length / lifetime and quantitative Fe & Cu measurements.
Dielectric leakage measurements and SDI’s patented SILC for evaluation of GOI, and dielectric composition such as nitrogen in plasma nitrided oxides.
non-contact C-V: dielectric charge and interface measurements, including precise determination of capacitance / and electrical Equivalent Oxide Thickness (EOT) for advanced dielectrics in the direct tunneling range.
non-contact C-V: dielectric charge and interface measurements for dielectrics in the F-N leakage range.
Mobile Charge: mobile ion measurements quantitative determination of Na & Cu contaminants.
Plasma Damage Monitoring.
Near Surface Doping: ionized impurity concentration measured in the surface silicon region.