Corona-Kelvin micro-measurements on product wafers: non-contact C-V and I-V measurement of electrical thickness of dielectrics, CET, oxide charge and micro-SASS.
Surface Photovoltage technology: contamination measurements; minority carrier diffusion length, recombination lifetime, surface recombination, quantitative Fe and Cu measurements, other recombination centers, whole wafer contamination mapping.
Digital SPV is the newest generation of technology with 10-fold improved precision for Fe monitoring in E8 atoms/cm3 range, the extraction of the very long steady state diffusion length, Lo, and measurement of wafer back surface recombination velocity, SB.
Self-adjusting-steady-state pulsed corona-Kelvin leakage measurements: dielectric tunneling, band-offsets; determination of dielectric composition such as nitrogen in plasma nitrided oxides and SILC evaluation.
Corona-Kelvin non-contact C-V technology: measurements of advanced ultra-thin dielectrics, dielectric charge and interface measurements, precise determination of capacitance / and electrical Equivalent Oxide Thickness, EOT and capacitance equivalent thickness, CET.
Corona-Oxide-Characterization of Semiconductors: measurements based on corona-Kelvin measurements with whole wafer charging and voltage mapping, dielectric charge and interface measurements for dielectrics in the F-N leakage range.
Mobile Charge: mobile ion mapping, quantitative determination of Na and Cu contaminants using whole wafer corona charging and voltage mapping before and after thermal stress.
Plasma Damage Monitoring: whole wafer mapping of surface voltage and plasma related dielectric charging.
Near Surface Doping; non-contact SPV measurement of ionized impurity concentration in the silicon space charge surface; sheet resistance measurement.
Non-contact metrology for photovoltaic industry: a new digital SPV variable low to high injection level measurement of wafers and photovoltaic cells at various stages of processing; probing of carrier injection induced PV cell degradation.