SL (scribe line) technology is the first and only non-contact electrical C-V & I-V measurement system capable of measuring on product wafers. Measurements can be made in scribe line test sites as small as 30micron x 30micron, or in the active cell area. Cell measurements allow for the first time in-line electrical monitoring of topology related processing issues. Major applications include measurements of SiO2, nitrided oxides, advanced high-K and low-K dielectrics.

The FAaST 300-SL tools provide:
  • Fully automated, non-contact C-V / I-V measurements for a wide range of advanced dielectrics.
  • Automatic extraction of dielectric capacitance / thickness, leakage, flatband voltage, interface trap density, and total oxide charge.
  • Application specific modes – such as trapped charge measurements in programmed and erased states of charge trap flash memory, and micro-SILC measurements.
  • Contour mapping showing cross wafer variations.
  • Fully automated operation, with multiple security levels designed for the manufacturing environment.
  • Options such as SMIF / FOUP loadports, automatic lot ID, wafer OCR, and fully SEMI compliant automation for data upload and remote system control.
  • Automatic internal calibration of voltage, and corona charge deposition.

The FAaST 300-SL systems are designed for 200mm-300mm wafer sizes, and is production proven in the fully automated environment for monitoring in high volume manufacturing.

Front view FAaST 300-SL
Front view FAaST 300-SL