SDI recently introduced non-contact product wafer measurements, in scribe line test sites or active cell area. They are the first and only such tools available in the industry. Major applications include measurements of Si / SiO2, and other more advanced high and low-K dielectrics: Full C-V and I-V characteristics, electrical dielectric thickness (EOT and CET), and oxide charge measurements.
SDI is also a leading supplier in contamination control measurements; non-visible defects, and other factors affecting Gate Oxide Integrity (GOI). The latest generation of patented SPV technology systems can detect Fe contamination levels below 1E8 cm-3 in silicon, making it the most sensitive technique available.
The current range of products are all manufactured in SDI’s Tampa facility, and provide non-contact measurements and high density mapping (>6000 points), without the need for special sample preparation. They include fully automated sequenced measurements of multiple parameters, which can be set up locally at the tool GUI for multiple wafer cassettes, or remotely via the fully SEMI compliant automation interface for use in a fully automated factory environment. FAaST™ 200 and 300 series tools are available as stand alone application specific models, or all measurement technologies can be combined in a single platform.
